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ELECTRONIC RELAXATION EFFECTS IN CORE LEVEL SPECTRA OF SOLIDSBECHSTEDT F.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. 9-49; BIBL. 20 REF.Article

ON THE THEORY OF PLASMON SATELLITE STRUCTURES IN THE PHOTOELECTRON SPECTRA OF NON-METALLIC SOLIDSBECHSTEDT F.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 101; NO 1; PP. 275-286; ABS. GER; BIBL. 39 REF.Article

ELECTRONIC POLARIZATION (RELAXATION EFFECTS IN THE CORE LEVEL SPECTRA OF SEMICONDUCTORS. I. GENERAL THEORY OF ELECTRONIC POLARIZATION (RELAXATION) IN SEMICONDUCTORSBECHSTEDT F; ENDERLEIN R.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 94; NO 1; PP. 239-248; ABS. GER; BIBL. 38 REF.Article

ELECTRONIC POLARIZATION (RELAXATION) EFFECTS IN THE CORE LEVEL SPECTRA OF SEMICONDUCTORS. II: APPLICATION TO GA 3D AND SI 2P LEVELSBECHSTEDT F; ENDERLEIN R.1979; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1979; VOL. 95; NO 1; PP. 185-194; ABS. GER; BIBL. 32 REF.Article

Analytical expressions for XC self-energies and quasiparticles shifts in free-electron-like materialsBECHSTEDT, F.Physica status solidi. B. Basic research. 1993, Vol 178, Num 2, pp 353-371, issn 0370-1972Article

INFLUENCE OF MASS DEFECT DISORDER ON RESONANCE RAMAN SCATTERING.KLEINERT P; BECHSTEDT F.1978; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1978; VOL. 85; NO 1; PP. 253-260; ABS. ALLEM.; BIBL. 11 REF.Article

THEORY OF ALLOWED RESONANCE RAMAN SCATTERING OF FIRST AND SECOND ORDER IN A MAGNETIC FIELD.ENDERLEIN R; BECHSTEDT F.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 80; NO 1; PP. 225-234; ABS. ALLEM.; BIBL. 16 REF.Article

THEORY OF SECOND-ORDER RESONANCE RAMAN SCATTERING IN THE CASE OF STRONG EXCITONIC EFFECTS.BECHSTEDT F; HAUS D.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 88; NO 1; PP. 163-171; ABS. GER; BIBL. 21 REF.Article

THEORY OF RESONANCE RAMAN SCATTERING IN DISORDERED SOLIDS.BECHSTEDT F; ENDERLEIN R.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 1; PP. 239-247; ABS. ALLEM.; BIBL. 15 REF.Article

THEORY OF CORE EXCITONS IN SEMICONDUCTORSBECHSTEDT F; ENDERLEIN R; KOCH M et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; DDR; DA. 1980; VOL. 99; NO 1; PP. 61-70; ABS. GER; BIBL. 37 REF.Article

RESONANCE RAMAN SCATTERING IN A STRONG ELECTRIC FIELD.BECHSTEDT F; ENDERLEIN R; PEUKER K et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 78; NO 2; PP. 711-719; ABS. ALLEM.; BIBL. 15 REF.Article

GENERAL THEORY OF LIGHT SCATTERING IN SOLIDSENDERLEIN R; PEUKER K; BECHSTEDT F et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 1; PP. 149-158; ABS. GER; BIBL. 11 REF.Article

ELECTRONIC ELEMENTARY EXCITATIONS IN THE FAR UV-SPECTRAL REGION. CORE LEVEL EXCITON AND CORE HOLE POLARIZATION.ENDERLEIN R; SEIFERT B; BECHSTEDT F et al.1978; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1978; VOL. 85; NO 2; PP. 569-576; ABS. ALLEM.; BIBL. 13 REF.Article

BINDING ENERGIES AND CHEMICAL SHIFTS OF LEAST BOUND CORE ELECTRON EXCITATIONS IN CUBIC ANBS-N SEMICONDUCTORSBECHSTEDT F; ENDERLEIN R; WISCHNEWSKI R et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. 637-651; ABS. GER; BIBL. 39 REF.Article

THEORY OF INTER-VALENCE-BAND ELECTRONIC RAMAN SCATTERING IN CUBIC SEMICONDUCTORS WITHOUT AND WITH AN EXTERNAL ELECTRIC FIELD.BECHSTEDT F; ENDERLEIN R; PEUKER K et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 1; PP. 43-52; ABS. ALLEM.; BIBL. 8 REF.Article

Effects of the Coulomb interaction on the otpical spectra of quantum wiresGLUTSCH, S; BECHSTEDT, F.Physical review. B, Condensed matter. 1993, Vol 47, Num 8, pp 4315-4326, issn 0163-1829Article

Interplay of Coulomb attraction and spatial confinement in the optical susceptibility of quantum wiresGLUTSCH, S; BECHSTEDT, F.Physical review. B, Condensed matter. 1993, Vol 47, Num 11, pp 6385-6389, issn 0163-1829Article

Validity of the continuum approach to optical phonons in short-period superlatticesBECHSTEDT, F; GERECKE, H.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 19, pp 4363-4369, issn 0953-8984Article

Calculation of surface-induced core-level shifts for covalent semiconductors C, Si, Ge, and α-Sn. II, (100)2 × 1 surfacesBECHSTEDT, F; REICHARDT, D.Physica status solidi. B. Basic research. 1990, Vol 157, Num 2, pp 567-575, issn 0370-1972Article

ZUR THEORIE DER RAMAN-STREUUNG IN UNGEORDNETEN SYSTEMEN = SUR LA THEORIE DE L'EFFET RAMAN DANS LES SYSTEMES DESORDONNESBECHSTEDT F; BOETTGER H; ENDERLEIN R et al.1979; WISS. Z. HUMBOLDT-UNIV. BERL., MATH.-NATURWISS. REIHE; ISSN 0522-9863; DDR; DA. 1979; NO 6; PP. 801-806; ABS. ENG/RUS/FRE; BIBL. 16 REF.Article

Electronic and phonon deformation potentials of GaN and AlN: Ab initio calculations versus experimentWAGNER, J.-M; BECHSTEDT, F.Physica status solidi. B. Basic research. 2002, Vol 234, Num 3, pp 965-969, issn 0370-1972, 5 p.Conference Paper

Influence of bulk-phonon-branch dispersion on displacement patterns and the intermixing of interface and confined optical phonons in superlatticesGERECKE, H; BECHSTEDT, F.Physical review. B, Condensed matter. 1991, Vol 43, Num 9, pp 7053-7065, issn 0163-1829, 13 p.Article

Exciton redshift for coherent near the absorption edgeGLUTSCH, S; BECHSTEDT, F.Physical review. B, Condensed matter. 1991, Vol 44, Num 3, pp 1368-1371, issn 0163-1829Article

Giant quasiparticle shifts of semiconductor surface statesBECHSTEDT, F; DEL SOLE, R.Solid state communications. 1990, Vol 74, Num 1, pp 41-44, issn 0038-1098, 4 p.Article

Ladungsträgerstreuung an polaren Grenzflächenphononen im 2-dimensionalen Elektronengas einer Halbleitergrenzfläche: Anwendung auf die Inversionsschicht eines MOS-FET = Diffusion des porteurs de charge par des phonons à l'interface polaire, dans le cas du gaz d'électrons à deux dimensions de l'interface semiconducteur: application à la couche d'inversion d'un transistor TEC-MOS XR = Scattering of charge carriers from polar interface phonons in 2-dimensional electron gas at semiconductor interface: application to MOS-FET inversion layersBECHSTEDT, F; ENDERLEIN, R.Annalen der Physik (Leipzig). 1986, Vol 43, Num 3-5, pp 146-156, issn 0003-3804Article

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